| Compliant with Exemption | |
| EAR99 | |
| Active | |
| SVHC | Yes |
| SVHC Exceeds Threshold | Yes |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single | |
| Enhancement | |
| N | |
| 1 | |
| 500 | |
| ±30 | |
| 5 | |
| 26 | |
| 100 | |
| 25 | |
| 250@10V | |
| 42@10V | |
| 42 | |
| 2220@25V | |
| 500000 | |
| 5 | |
| 7 | |
| 38 | |
| 21 | |
| -55 | |
| 150 | |
| Mounting | Through Hole |
| Package Height | 21.45(Max) |
| Package Width | 5.3(Max) |
| Package Length | 16.24(Max) |
| PCB changed | 3 |
| Tab | Tab |
| Standard Package Name | TO |
| Supplier Package | TO-247AD |
| 3 | |
| Lead Shape | Through Hole |
Make an effective common gate amplifier using this IXFH26N50P3 power MOSFET from Ixys Corporation. Its maximum power dissipation is 500000 mW. This N channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C. This device utilizes hiperfet technology.
| EDA / CAD Models |
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