| Compliant with Exemption | |
| EAR99 | |
| Active | |
| SVHC | Yes |
| SVHC Exceeds Threshold | Yes |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single | |
| Enhancement | |
| N | |
| 1 | |
| 1000 | |
| ±30 | |
| 15 | |
| 760@10V | |
| 97@10V | |
| 97 | |
| 5140@25V | |
| 543000 | |
| 58 | |
| 44 | |
| 44 | |
| 41 | |
| -55 | |
| 150 | |
| Mounting | Through Hole |
| Package Height | 21.46(Max) mm |
| Package Width | 5.3(Max) mm |
| Package Length | 16.26(Max) mm |
| PCB changed | 3 |
| Tab | Tab |
| Standard Package Name | TO |
| Supplier Package | TO-247 |
| 3 |
As an alternative to traditional transistors, the IXFH15N100P power MOSFET from Ixys Corporation can be used to both amplify and switch electronic signals. Its maximum power dissipation is 543000 mW. This device is made with hiperfet technology. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. This N channel MOSFET transistor operates in enhancement mode.
| EDA / CAD Models |
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