| Compliant | |
| EAR99 | |
| Obsolete | |
| 8541.29.00.95 | |
| Automotive | No |
| PPAP | No |
| N | |
| Single Dual Emitter | |
| ±20 | |
| 1200 | |
| 1.8 | |
| 88 | |
| 0.5 | |
| 290 | |
| -40 | |
| 125 | |
| Tube | |
| Mounting | Screw |
| Package Width | 25.42(Max) mm |
| Package Length | 38.23(Max) mm |
| PCB changed | 4 |
| Standard Package Name | SOT |
| Supplier Package | SOT-227B |
| 4 |
This powerful and secure IXA60IF1200NA IGBT transistor from Ixys Corporation will make sure your circuit works properly. Its maximum power dissipation is 290000 mW. It has a maximum collector emitter voltage of 1200 V. In order to ensure parts aren't damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. It is made in a single dual emitter configuration. This device is made with xpt technology. This IGBT transistor has a minimum operating temperature of -40 °C and a maximum of 125 °C.
| EDA / CAD Models |
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