| EU RoHS | Compliant |
| ECCN (US) | EAR99 |
| Part Status | Active |
| HTS | 8541.29.00.95 |
| Automotive | No |
| PPAP | No |
| Product Category | Power MOSFET |
| Configuration | Single |
| Channel Mode | Enhancement |
| Channel Type | N |
| Number of Elements per Chip | 1 |
| Maximum Drain-Source Voltage (V) | 200 |
| Maximum Gate-Source Voltage (V) | ±10 |
| Maximum Gate Threshold Voltage (V) | 2 |
| Operating Junction Temperature (°C) | -55 to 150 |
| Maximum Continuous Drain Current (A) | 17 |
| Maximum Gate-Source Leakage Current (nA) | 100 |
| Maximum IDSS (uA) | 25 |
| Maximum Drain-Source Resistance (mOhm) | 180@5V |
| Typical Gate Charge @ Vgs (nC) | 66(Max)@5V |
| Typical Gate to Drain Charge (nC) | 38(Max) |
| Typical Gate to Source Charge (nC) | 9(Max) |
| Typical Reverse Recovery Charge (nC) | 3200 |
| Typical Input Capacitance @ Vds (pF) | 1800@25V |
| Typical Reverse Transfer Capacitance @ Vds (pF) | 120@25V |
| Minimum Gate Threshold Voltage (V) | 1 |
| Typical Output Capacitance (pF) | 400 |
| Maximum Power Dissipation (mW) | 125000 |
| Typical Fall Time (ns) | 52 |
| Typical Rise Time (ns) | 83 |
| Typical Turn-Off Delay Time (ns) | 44 |
| Typical Turn-On Delay Time (ns) | 8 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Operating Temperature (°C) | 150 |
| Maximum Positive Gate-Source Voltage (V) | 10 |
| Maximum Pulsed Drain Current @ TC=25°C (A) | 68 |
| Typical Gate Plateau Voltage (V) | 3.3 |
| Typical Reverse Recovery Time (ns) | 310 |
| Maximum Diode Forward Voltage (V) | 2 |
| Minimum Gate Resistance (Ohm) | 0.3 |
| Maximum Gate Resistance (Ohm) | 1.2 |
| Mounting | Through Hole |
| Package Height | 9.14(Max) |
| Package Width | 4.65(Max) |
| Package Length | 10.52(Max) |
| PCB changed | 3 |
| Tab | Tab |
| Standard Package Name | TO |
| Supplier Package | TO-220AB |
| Pin Count | 3 |
| Lead Shape | Through Hole |
