| Compliant | |
| EAR99 | |
| Active | |
| COMPONENTS | |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single | |
| Enhancement | |
| P | |
| 1 | |
| 100 | |
| ±20 | |
| 4 | |
| 1200@10V | |
| 8.7(Max)@10V | |
| 8.7(Max) | |
| 200@25V | |
| 43000 | |
| 17 | |
| 27 | |
| 15 | |
| 10 | |
| -55 | |
| 175 | |
| Mounting | Through Hole |
| Package Height | 9.01(Max) |
| Package Width | 4.65(Max) |
| Package Length | 10.51(Max) |
| PCB changed | 3 |
| Tab | Tab |
| Standard Package Name | TO |
| Supplier Package | TO-220AB |
| 3 | |
| Lead Shape | Through Hole |
Do you require the advantages of traditional transistors coupled with the switching benefits of power MOSFETs? Vishay's IRF9510PBF power MOSFET can provide a solution. Its maximum power dissipation is 43000 mW. This MOSFET transistor has an operating temperature range of -55 °C to 175 °C. This device utilizes HEXFET technology. This P channel MOSFET transistor operates in enhancement mode.
| EDA / CAD Models |
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