Infineon Technologies AGIPW65R190CFDFKSA1MOSFETs
Trans MOSFET N-CH 650V 17.5A 3-Pin(3+Tab) TO-247 Tube
| Compliant | |
| EAR99 | |
| Obsolete | |
| 8541.29.00.95 | |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single | |
| Enhancement | |
| N | |
| 1 | |
| 650 | |
| 20 | |
| 4.5 | |
| -55 to 150 | |
| 17.5 | |
| 100 | |
| 1 | |
| 190@10V | |
| 68@10V | |
| 68 | |
| 1850@100V | |
| 151000 | |
| 6.4 | |
| 8.4 | |
| 53.2 | |
| 12 | |
| -55 | |
| 150 | |
| Tube | |
| Mounting | Through Hole |
| Package Height | 21.1(Max) |
| Package Width | 5.21(Max) |
| Package Length | 16.13(Max) |
| PCB changed | 3 |
| Tab | Tab |
| Standard Package Name | TO |
| Supplier Package | TO-247 |
| 3 | |
| Lead Shape | Through Hole |
Create an effective common drain amplifier using this IPW65R190CFDFKSA1 power MOSFET from Infineon Technologies. Its maximum power dissipation is 151000 mW. In order to ensure parts aren't damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. This N channel MOSFET transistor operates in enhancement mode. This device utilizes coolmos technology. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C.
| EDA / CAD Models |
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