Infineon Technologies AGIPG20N06S2L35ATMA1MOSFETs
IPG20N06S2L35ATMA1 Infineon Technologies AG Transistors MOSFETs N-CH 55V 20A Automotive 8-Pin TDSON EP T/R - Arrow.com
| Compliant with Exemption | |
| EAR99 | |
| Active | |
| 8541.29.00.95 | |
| SVHC | Yes |
| SVHC Exceeds Threshold | Yes |
| Automotive | Yes |
| PPAP | Unknown |
| Power MOSFET | |
| Dual Dual Drain | |
| Enhancement | |
| N | |
| 2 | |
| 55 | |
| ±20 | |
| 2 | |
| 20 | |
| 35@10V | |
| 18@10V | |
| 18 | |
| 610@25V | |
| 65000 | |
| 15 | |
| 5 | |
| 25 | |
| 3 | |
| -55 | |
| 175 | |
| Automotive | |
| Tape and Reel | |
| 28@10V|35@4.5V | |
| Mounting | Surface Mount |
| Package Height | 1 mm |
| Package Width | 5.9 mm |
| Package Length | 5.15 mm |
| PCB changed | 8 |
| Standard Package Name | SON |
| Supplier Package | TDSON EP |
| 8 | |
| Lead Shape | No Lead |
Looking for a component that can both amplify and switch between signals within your circuit? The IPG20N06S2L35ATMA1 power MOSFET from Infineon Technologies provides the solution. Its maximum power dissipation is 65000 mW. This product will be shipped in tape and reel packaging so that components can be mounted effectively. This device utilizes optimos technology. This N channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has an operating temperature range of -55 °C to 175 °C.
| EDA / CAD Models |
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