Infineon Technologies AGIPD60R380C6ATMA1MOSFETs
Trans MOSFET N-CH 600V 10.6A 3-Pin(2+Tab) DPAK T/R
| Compliant with Exemption | |
| EAR99 | |
| NRND | |
| COMPONENTS | |
| SVHC | Yes |
| SVHC Exceeds Threshold | Yes |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single | |
| Enhancement | |
| N | |
| 1 | |
| 600 | |
| 20 | |
| 3.5 | |
| 10.6 | |
| 100 | |
| 1 | |
| 380@10V | |
| 32@10V | |
| 32 | |
| 700@100V | |
| 83000 | |
| 9 | |
| 10 | |
| 110 | |
| 15 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| 340@10V | |
| Mounting | Surface Mount |
| Package Height | 2.41(Max) mm |
| Package Width | 6.22(Max) mm |
| Package Length | 6.73(Max) mm |
| PCB changed | 2 |
| Tab | Tab |
| Standard Package Name | TO |
| Supplier Package | DPAK |
| 3 | |
| Lead Shape | Gull-wing |
Do you require the advantages of traditional transistors coupled with the switching benefits of power MOSFETs? Infineon Technologies' IPD60R380C6ATMA1 power MOSFET can provide a solution. Its maximum power dissipation is 83000 mW. This N channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C. This device utilizes coolmos c6 technology.
| EDA / CAD Models |
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