Infineon Technologies AGIPD031N06L3GATMA1MOSFETs
Trans MOSFET N-CH 60V 100A 3-Pin(2+Tab) DPAK T/R
| Compliant with Exemption | |
| EAR99 | |
| Active | |
| COMPONENTS | |
| SVHC | Yes |
| SVHC Exceeds Threshold | Yes |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single | |
| Enhancement | |
| N | |
| 1 | |
| 60 | |
| ±20 | |
| 2.2 | |
| -55 to 175 | |
| 100 | |
| 3.1@10V | |
| 59@4.5V | |
| 10000@30V | |
| 167000 | |
| 13 | |
| 78 | |
| 64 | |
| 25 | |
| -55 | |
| 175 | |
| Tape and Reel | |
| 400 | |
| Mounting | Surface Mount |
| Package Height | 2.3 |
| Package Width | 6.22 |
| Package Length | 6.5 |
| PCB changed | 2 |
| Tab | Tab |
| Standard Package Name | TO |
| Supplier Package | DPAK |
| 3 | |
| Lead Shape | Gull-wing |
If you need to either amplify or switch between signals in your design, then Infineon Technologies' IPD031N06L3GATMA1 power MOSFET is for you. Its maximum power dissipation is 167000 mW. This product will be shipped in tape and reel packaging so that components can be mounted effectively. This MOSFET transistor has an operating temperature range of -55 °C to 175 °C. This N channel MOSFET transistor operates in enhancement mode. This device utilizes optimos technology.
| EDA / CAD Models |
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