Diodes IncorporatedFMMT620TAGP BJT
Trans GP BJT NPN 80V 1.5A 806mW 3-Pin SOT-23 T/R
| Compliant | |
| EAR99 | |
| Active | |
| COMPONENTS | |
| Automotive | No |
| PPAP | No |
| NPN | |
| Bipolar Small Signal | |
| Si | |
| Single | |
| 1 | |
| 100 | |
| 80 | |
| 7 | |
| -55 to 150 | |
| 0.5 | |
| 1@50mA@1.5A | |
| 0.02@10mA@0.1A|0.06@50mA@0.5A|0.185@20mA@1A|0.2@50mA@1.5A | |
| 1.5 | |
| 100 | |
| 200@10mA@2V|300@200mA@2V|110@1A@2V|60@1.5A@2V|20@3A@2V | |
| 806 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| Mounting | Surface Mount |
| Package Height | 0.98 mm |
| Package Width | 1.3 mm |
| Package Length | 2.9 mm |
| PCB changed | 3 |
| Standard Package Name | SOT |
| Supplier Package | SOT-23 |
| 3 | |
| Lead Shape | Gull-wing |
If you require a general purpose BJT that can handle high voltages, then the NPN FMMT620TA BJT, developed by Diodes Zetex, is for you. This bipolar junction transistor's maximum emitter base voltage is 7 V. Its maximum power dissipation is 806 mW. Tape and reel packaging will encase the product during shipment, ensuring safe delivery and enabling quick mounting of components. This bipolar junction transistor has an operating temperature range of -55 °C to 150 °C. It has a maximum collector emitter voltage of 80 V and a maximum emitter base voltage of 7 V.
| EDA / CAD Models |
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