onsemiFDV301NMOSFETs

The ON Semiconductor MOSFET has been designed especially for low voltage applications as a replacement for digital transistors. The maximum Drain Source Voltage of the product is 25 V and Gate Source Voltage is 8V. Its maximum power dissipation is 350 mW. It has 1 number of elements per chip. This MOSFET has an operating temperature range of -55°C to 150°C.

Features and Benefits:
• 25 V, 0.22 A continuous, 0.5 A Peak. RDS(ON) = 5 W @ VGS= 2.7 V RDS(ON) = 4 W @ VGS= 4.5 V
• Very low level gate drive requirements allowing direct operation in 3V circuits. VGS(th) < 1.06V
• Gate-Source Zener for ESD ruggedness. >6kV Human Body Model
• Replace multiple NPN digital transistors with one DMOS FET.

Application:
• FDV301N is a Digital MOSFET which can be trigger ON by applying voltages as low as 2.0V to its gate. With that being the case the device can be used in all low voltage digital circuits.
• FDV301N can also be as a high speed switching device replacing all conventional transistors in digital circuits since it is specifically designed for high speed switching applications.
• The device had very low turn ON resistance which is a must condition in some applications.
• The device is also preferred for high efficiency application as the low drop during switching leads to less power loss and with less power loss the efficiency of the system will be more.