Diodes IncorporatedFCX717TAGP BJT
Trans GP BJT PNP 12V 3A 2000mW 4-Pin(3+Tab) SOT-89 T/R
| Compliant | |
| EAR99 | |
| Active | |
| 8541.29.00.75 | |
| Automotive | No |
| PPAP | No |
| PNP | |
| Bipolar Power | |
| Si | |
| Single Dual Collector | |
| 1 | |
| 12 | |
| 12 | |
| 5 | |
| 1.05@50mA@3A | |
| 0.02@10mA@0.1A|0.15@10mA@1A|0.32@50mA@3A | |
| 3 | |
| 100 | |
| 300@10mA@2V|300@0.1A@2V|160@3A@2V|60@8A@2V|45@10A@2V | |
| 2000 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| Mounting | Surface Mount |
| Package Height | 1.5 mm |
| Package Width | 2.5 mm |
| Package Length | 4.5 mm |
| PCB changed | 3 |
| Tab | Tab |
| Standard Package Name | SOT |
| Supplier Package | SOT-89 |
| 4 | |
| Lead Shape | Flat |
Thanks to Diodes Zetex, your circuit can handle high levels of voltage using the PNP FCX717TA general purpose bipolar junction transistor. This bipolar junction transistor's maximum emitter base voltage is 5 V. Its maximum power dissipation is 2000 mW. This component will be shipped in tape and reel packaging for effective mounting and safe delivery. This bipolar junction transistor has an operating temperature range of -55 °C to 150 °C. It has a maximum collector emitter voltage of 12 V and a maximum emitter base voltage of 5 V.
| EDA / CAD Models |
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