onsemiDTC123JET1GDigital BJT - Pre-Biased
Trans Digital BJT NPN 50V 0.1A 300mW 3-Pin SOT-416 T/R
| Compliant | |
| EAR99 | |
| Active | |
| 8541.21.00.95 | |
| Automotive | No |
| PPAP | No |
| NPN | |
| Single | |
| 50 | |
| 0.1 | |
| 80@5mA@10V | |
| 2.2 | |
| 0.047 | |
| 0.25@1mA@10mA | |
| 300 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| Mounting | Surface Mount |
| Package Height | 0.75 |
| Package Width | 0.8 |
| Package Length | 1.6 |
| PCB changed | 3 |
| Standard Package Name | SOT |
| Supplier Package | SOT-416 |
| 3 | |
| Lead Shape | Gull-wing |
The NPN DTC123JET1G digital transistor from ON Semiconductor is your alternative to traditional BJTs in that it can provide digital signal processing power. This product's maximum continuous DC collector current is 100 mA, while its minimum DC current gain is 80@5mA@10 V. It has a maximum collector emitter saturation voltage of 0.25@1mA@10mA V. Its maximum power dissipation is 300 mW. It has a maximum collector emitter voltage of 50 V. This product will be shipped in tape and reel packaging for quick mounting and safe delivery. It is made in a single configuration. This transistor has an operating temperature range of -55 °C to 150 °C.
| EDA / CAD Models |
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