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onsemiDTC114YET1GDigital BJT - Pre-Biased
Trans Digital BJT NPN 50V 0.1A 300mW 3-Pin SOT-416 T/R
| Compliant | |
| EAR99 | |
| Active | |
| 8541.21.00.95 | |
| Automotive | No |
| PPAP | No |
| NPN | |
| Single | |
| 50 | |
| 0.1 | |
| 80@5mA@10V | |
| 10 | |
| -55 to 150 | |
| 0.21 | |
| 0.25@0.3mA@10mA | |
| 300 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| 50 to 120 | |
| Mounting | Surface Mount |
| Package Height | 0.75 mm |
| Package Width | 0.8 mm |
| Package Length | 1.6 mm |
| PCB changed | 3 |
| Standard Package Name | SOT |
| Supplier Package | SOT-416 |
| 3 | |
| Lead Shape | Gull-wing |
In addition to offering some of the benefits of traditional BJTs, the NPN DTC114YET1G digital transistor, developed by ON Semiconductor, can be used in digital signal processing circuits as well. This product's maximum continuous DC collector current is 100 mA, while its minimum DC current gain is 80@5mA@10 V. It has a maximum collector emitter saturation voltage of 0.25@0.3mA@10mA V. It has a maximum collector emitter voltage of 50 V. Its maximum power dissipation is 300 mW. This component will be shipped in tape and reel packaging for effective mounting and safe delivery. This transistor has an operating temperature range of -55 °C to 150 °C. It is made in a single configuration.
| EDA / CAD Models |
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