Diodes IncorporatedDPLS350E-13GP BJT

Trans GP BJT PNP 50V 3A 1000mW 4-Pin(3+Tab) SOT-223 T/R

Design filters, receivers, transmitters, op-amps, power supplies, and control circuits with this versatile PNP DPLS350E-13 GP BJT from Diodes Zetex. This bipolar junction transistor's maximum emitter base voltage is 6 V. Its maximum power dissipation is 1000 mW. This product will be shipped in tape and reel packaging to allow for quick mounting and safe delivery. This bipolar junction transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. It has a maximum collector emitter voltage of 50 V and a maximum emitter base voltage of 6 V.

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No Stock Available

Quantity Increments of 2500 Minimum 2500
  • Date Code:
    2427+
    Manufacturer Lead Time:
    24 weeks
    Country Of origin:
    China
    • Price: $0.0985
    1. 2500+$0.0985
    2. 5000+$0.0908
    3. 10000+$0.0807

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