| EU RoHS | Compliant |
| ECCN (US) | EAR99 |
| Part Status | Active |
| HTS | COMPONENTS |
| Automotive | No |
| PPAP | No |
| Product Category | Power MOSFET |
| Configuration | Dual |
| Channel Mode | Enhancement |
| Channel Type | N |
| Number of Elements per Chip | 2 |
| Maximum Drain-Source Voltage (V) | 30 |
| Maximum Gate-Source Voltage (V) | ±20 |
| Maximum Gate Threshold Voltage (V) | 2.8 |
| Operating Junction Temperature (°C) | -55 to 150 |
| Maximum Continuous Drain Current (A) | 1 |
| Maximum Gate-Source Leakage Current (nA) | 10000 |
| Maximum IDSS (uA) | 1 |
| Maximum Drain-Source Resistance (mOhm) | 190@10V |
| Typical Gate Charge @ Vgs (nC) | 0.9@4.5V|2@10V |
| Typical Gate Charge @ 10V (nC) | 2 |
| Typical Gate to Drain Charge (nC) | 0.3 |
| Typical Gate to Source Charge (nC) | 0.3 |
| Typical Input Capacitance @ Vds (pF) | 87@20V |
| Typical Reverse Transfer Capacitance @ Vds (pF) | 12@20V |
| Minimum Gate Threshold Voltage (V) | 1.5 |
| Typical Output Capacitance (pF) | 17 |
| Maximum Power Dissipation (mW) | 400 |
| Typical Fall Time (ns) | 15.6 |
| Typical Rise Time (ns) | 8.9 |
| Typical Turn-Off Delay Time (ns) | 30.3 |
| Typical Turn-On Delay Time (ns) | 4.5 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Operating Temperature (°C) | 150 |
| Packaging | Tape and Reel |
| Typical Drain-Source Resistance @ 25°C (mOhm) | 122@10V|181@4.5V |
| Maximum Power Dissipation on PCB @ TC=25°C (W) | 0.4 |
| Maximum Pulsed Drain Current @ TC=25°C (A) | 9.6 |
| Maximum Junction Ambient Thermal Resistance on PCB (°C/W) | 320 |
| Typical Gate Plateau Voltage (V) | 2.9 |
| Maximum Diode Forward Voltage (V) | 1.2 |
| Maximum Positive Gate-Source Voltage (V) | 20 |
| Maximum Continuous Drain Current on PCB @ TC=25°C (A) | 1 |
| Mounting | Surface Mount |
| Package Height | 0.95 mm |
| Package Width | 1.3 mm |
| Package Length | 2.15 mm |
| PCB changed | 6 |
| Standard Package Name | SOT |
| Supplier Package | SOT-363 |
| Pin Count | 6 |
| Lead Shape | Gull-wing |
