| Compliant with Exemption | |
| EAR99 | |
| Active | |
| COMPONENTS | |
| SVHC | Yes |
| SVHC Exceeds Threshold | Yes |
| Automotive | No |
| PPAP | No |
| PNP | |
| Bipolar Power | |
| Si | |
| Single | |
| 1 | |
| 80 | |
| 7 | |
| 1@0.4A@8A|1.5@0.4A@8A | |
| 1@0.8A@8A|1.5@3A@15A | |
| 15 | |
| 35@2A@1V|20@4A@1V | |
| 83000 | |
| -55 | |
| 150 | |
| Tube | |
| Mounting | Through Hole |
| Package Height | 8.9 mm |
| Package Width | 4.45 mm |
| Package Length | 10.1 mm |
| PCB changed | 3 |
| Tab | Tab |
| Standard Package Name | TO |
| Supplier Package | TO-220AB |
| 3 | |
| Lead Shape | Through Hole |
The PNP D45VH10G general purpose bipolar junction transistor, developed by ON Semiconductor, is the perfect solution for your high-current density needs. This bipolar junction transistor's maximum emitter base voltage is 7 V. Its maximum power dissipation is 83000 mW. This product comes in rail packaging to keep individual parts separated and protected. It has a maximum collector emitter voltage of 80 V and a maximum emitter base voltage of 7 V. This bipolar junction transistor has an operating temperature range of -55 °C to 150 °C.
| EDA / CAD Models |
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