| Compliant | |
| EAR99 | |
| Active | |
| 8541.21.00.95 | |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single Dual Drain Triple Source | |
| NexFET | |
| Enhancement | |
| P | |
| 1 | |
| 20 | |
| ±8 | |
| 1.15 | |
| 3 | |
| 100 | |
| 1 | |
| 32.5@4.5V | |
| 3.3@4.5V | |
| 0.5 | |
| 458@10V | |
| 750 | |
| 10 | |
| 4 | |
| 24 | |
| 6 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| 0.8 | |
| Mounting | Surface Mount |
| Package Height | 0.28(Max) mm |
| Package Width | 1(Max) mm |
| Package Length | 1.49(Max) mm |
| PCB changed | 6 |
| Standard Package Name | BGA |
| Supplier Package | DSBGA |
| 6 | |
| Lead Shape | Ball |
This CSD25304W1015T power MOSFET from Texas Instruments can not only be used for amplifying electronic signals but also for switching between electronic signals. Its maximum power dissipation is 1500 mW. In order to guarantee safe delivery and allow for quick mounting of this component after delivery, it will be enclosed in tape and reel packaging during shipment. This P channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. This device is made with nexfet technology.
| EDA / CAD Models |
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