| Compliant with Exemption | |
| EAR99 | |
| Active | |
| COMPONENTS | |
| SVHC | Yes |
| SVHC Exceeds Threshold | Yes |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Si | |
| Single Quad Drain Triple Source | |
| Enhancement | |
| N | |
| 1 | |
| 30 | |
| ±20 | |
| 1.9 | |
| 100 | |
| 100 | |
| 1 | |
| 0.69@10V | |
| 93@4.5V | |
| 34 | |
| 10400@15V | |
| 3200 | |
| 74 | |
| 36 | |
| 144 | |
| 5 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| 1.5 | |
| Mounting | Surface Mount |
| Package Height | 1 mm |
| Package Width | 6 mm |
| Package Length | 5 mm |
| PCB changed | 8 |
| Standard Package Name | SON |
| Supplier Package | VSON-CLIP EP |
| 8 | |
| Lead Shape | No Lead |
Make an effective common gate amplifier using this CSD17570Q5BT power MOSFET from Texas Instruments. Its maximum power dissipation is 3200 mW. This component will be shipped in tape and reel packaging for effective mounting and safe delivery. This device is made with nexfet technology. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. This N channel MOSFET transistor operates in enhancement mode.
| EDA / CAD Models |
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