STMicroelectronicsBUL1102EGP BJT
Trans GP BJT NPN 450V 4A 70000mW 3-Pin(3+Tab) TO-220AB Tube
| Compliant with Exemption | |
| EAR99 | |
| Active | |
| 8541.29.00.95 | |
| SVHC | Yes |
| SVHC Exceeds Threshold | Yes |
| Automotive | No |
| PPAP | No |
| NPN | |
| Bipolar Power | |
| Single | |
| 1 | |
| 450 | |
| 12 | |
| 150 | |
| 2 | |
| 1.5@400mA@2A | |
| 1.5@400mA@2A | |
| 4 | |
| 35@250mA@5V|12@2A@5V | |
| 70000 | |
| -65 | |
| 150 | |
| Tube | |
| Industrial | |
| Mounting | Through Hole |
| Package Height | 9.15(Max) mm |
| Package Width | 4.6(Max) mm |
| Package Length | 10.4(Max) mm |
| PCB changed | 3 |
| Tab | Tab |
| Standard Package Name | TO |
| Supplier Package | TO-220AB |
| 3 | |
| Lead Shape | Through Hole |
Compared to other transistors, the NPN BUL1102E general purpose bipolar junction transistor, developed by STMicroelectronics, can offer a high-voltage solution in your circuit. This bipolar junction transistor's maximum emitter base voltage is 12 V. Its maximum power dissipation is 70000 mW. In order to ensure parts aren't damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. This bipolar junction transistor has an operating temperature range of -65 °C to 150 °C. It has a maximum collector emitter voltage of 450 V and a maximum emitter base voltage of 12 V.
| EDA / CAD Models |
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