STMicroelectronicsBU508AFGP BJT
Trans GP BJT NPN 700V 8A 50000mW 3-Pin(3+Tab) ISOWATT218FX Tube
| Compliant with Exemption | |
| EAR99 | |
| Active | |
| 8541.29.00.95 | |
| SVHC | Yes |
| SVHC Exceeds Threshold | Yes |
| Automotive | No |
| PPAP | No |
| NPN | |
| Bipolar Power | |
| Single | |
| 1 | |
| 700 | |
| 9 | |
| 1.1@2A@4.5A | |
| 1@1.6A@4.5A | |
| 8 | |
| 10@0.1A@5V|5@4.5A@5V | |
| 50000 | |
| -65 | |
| 150 | |
| Tube | |
| Industrial | |
| Mounting | Through Hole |
| Package Height | 16.5(Max) |
| Package Width | 5.7(Max) |
| Package Length | 15.7(Max) |
| PCB changed | 3 |
| Tab | Tab |
| Standard Package Name | SO |
| Supplier Package | ISOWATT218FX |
| 3 |
Design various electronic circuits with this versatile NPN BU508AF GP BJT from STMicroelectronics. This bipolar junction transistor's maximum emitter base voltage is 9 V. Its maximum power dissipation is 50000 mW. In order to ensure parts aren't damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. It has a maximum collector emitter voltage of 700 V and a maximum emitter base voltage of 9 V. This bipolar junction transistor has a minimum operating temperature of -65 °C and a maximum of 150 °C.
| EDA / CAD Models |
Design AI-powered medical devices
Explore system design tips, part recs and AI insights to help you build faster, safer diagnostic and therapy solutions—all in Arrow’s latest white paper.