Infineon Technologies AGBSS7728NH6327XTSA2MOSFETs
Trans MOSFET N-CH 60V 0.2A 3-Pin SOT-23 T/R Automotive AEC-Q101
| Compliant | |
| EAR99 | |
| Obsolete | |
| 8541.21.00.95 | |
| Automotive | Yes |
| PPAP | Unknown |
| Small Signal | |
| Single | |
| Enhancement | |
| N | |
| 1 | |
| 60 | |
| ±20 | |
| 0.2 | |
| 5000@10V | |
| 1@10V | |
| 1 | |
| 37@25V | |
| 360 | |
| 9 | |
| 2.7 | |
| 6.1 | |
| 2.7 | |
| -55 | |
| 150 | |
| Automotive | |
| Tape and Reel | |
| Mounting | Surface Mount |
| Package Height | 1(Max) mm |
| Package Width | 1.3 mm |
| Package Length | 2.9 mm |
| PCB changed | 3 |
| Standard Package Name | SOT |
| Supplier Package | SOT-23 |
| 3 | |
| Lead Shape | Gull-wing |
As an alternative to traditional transistors, the BSS7728NH6327XTSA2 power MOSFET from Infineon Technologies can be used to both amplify and switch electronic signals. Its maximum power dissipation is 360 mW. This product will be shipped in tape and reel packaging for quick mounting and safe delivery. This N channel MOSFET transistor operates in enhancement mode. This device is made with sipmos technology. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.
| EDA / CAD Models |
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