Infineon Technologies AGBSC883N03LSGATMA1MOSFETs
Trans MOSFET N-CH 34V 17A 8-Pin TDSON EP T/R
| Compliant with Exemption | |
| EAR99 | |
| Obsolete | |
| COMPONENTS | |
| SVHC | Yes |
| SVHC Exceeds Threshold | Yes |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single Quad Drain Triple Source | |
| Enhancement | |
| N | |
| 1 | |
| 34 | |
| ±20 | |
| 17 | |
| 3.8@10V | |
| 17@4.5V|34@10V | |
| 34 | |
| 2800@15V | |
| 2500 | |
| 4 | |
| 4.4 | |
| 26 | |
| 6.4 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| Mounting | Surface Mount |
| Package Height | 1 mm |
| Package Width | 5.9 mm |
| Package Length | 5.15 mm |
| PCB changed | 8 |
| Standard Package Name | SON |
| Supplier Package | TDSON EP |
| 8 | |
| Lead Shape | No Lead |
Create an effective common drain amplifier using this BSC883N03LSGATMA1 power MOSFET from Infineon Technologies. Its maximum power dissipation is 2500 mW. This product will be shipped in tape and reel packaging for quick mounting and safe delivery. This N channel MOSFET transistor operates in enhancement mode. This device utilizes optimos technology. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C.
| EDA / CAD Models |
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