Infineon Technologies AGBSC252N10NSFGATMA1MOSFETs
Trans MOSFET N-CH 100V 7.2A 8-Pin TDSON EP T/R
| Compliant with Exemption | |
| EAR99 | |
| Active | |
| BSC252N10NSFGATMA1 | |
| SVHC | Yes |
| SVHC Exceeds Threshold | Yes |
| Automotive | Unknown |
| PPAP | Unknown |
| Power MOSFET | |
| Single Quad Drain Triple Source | |
| OptiMOS 2 | |
| Enhancement | |
| N | |
| 1 | |
| 100 | |
| ±20 | |
| 4 | |
| 7.2 | |
| 25.2@10V | |
| 13@10V | |
| 13 | |
| 860@50V | |
| 280 | |
| 78000 | |
| 4 | |
| 21 | |
| 16 | |
| 11 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| Mounting | Surface Mount |
| Package Height | 1 mm |
| Package Width | 5.9 mm |
| Package Length | 5.15 mm |
| PCB changed | 8 |
| Standard Package Name | SON |
| Supplier Package | TDSON EP |
| 8 | |
| Lead Shape | No Lead |
Looking for a component that can both amplify and switch between signals within your circuit? The BSC252N10NSFGATMA1 power MOSFET from Infineon Technologies provides the solution. Its maximum power dissipation is 78000 mW. In order to ensure safe delivery and enable quick mounting of this component after delivery, it will be encased in tape and reel packaging during shipment. This N channel MOSFET transistor operates in enhancement mode. This device utilizes optimos 2 technology. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C.
| EDA / CAD Models |
Design AI-powered medical devices
Explore system design tips, part recs and AI insights to help you build faster, safer diagnostic and therapy solutions—all in Arrow’s latest white paper.