Infineon Technologies AGBSC0911NDATMA1MOSFETs
Trans MOSFET N-CH 25V 18A/30A 8-Pin TISON EP T/R
| Compliant with Exemption | |
| EAR99 | |
| Active | |
| COMPONENTS | |
| SVHC | Yes |
| SVHC Exceeds Threshold | Yes |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Dual | |
| Enhancement | |
| N | |
| 2 | |
| 25 | |
| ±20 | |
| 2 | |
| 18@Q1|30@Q2 | |
| 100 | |
| 1@Q 1|500@Q 2 | |
| 3.2@10V@Q1|1.2@10V@Q2 | |
| 7.7@4.5V@Q1|25@4.5V@Q2 | |
| 1200@12V@Q1|3800@12V@Q2 | |
| 2500 | |
| 2.2@Q 1|4@Q 2 | |
| 2.8@Q 1|5.4@Q 2 | |
| 15@Q 1|25@Q 2 | |
| 3.3@Q 1|3.8@Q 2 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| Mounting | Surface Mount |
| Package Height | 1.1(Max) mm |
| Package Width | 6.1(Max) mm |
| Package Length | 5.1(Max) mm |
| PCB changed | 8 |
| Standard Package Name | SON |
| Supplier Package | TISON EP |
| 8 | |
| Lead Shape | No Lead |
As an alternative to traditional transistors, the BSC0911NDATMA1 power MOSFET from Infineon Technologies can be used to both amplify and switch electronic signals. Its maximum power dissipation is 2500 mW. Tape and reel packaging will encase this product during shipment, in order to ensure safe delivery and enable quick mounting of components. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C. This device utilizes optimos technology. This N channel MOSFET transistor operates in enhancement mode.
| EDA / CAD Models |
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