| Compliant | |
| EAR99 | |
| Active | |
| 8541.29.00.95 | |
| SVHC | Yes |
| SVHC Exceeds Threshold | Yes |
| Automotive | No |
| PPAP | No |
| NPN | |
| Bipolar Power | |
| Si | |
| Single | |
| 1 | |
| 80 | |
| 80 | |
| 5 | |
| -55 to 150 | |
| 0.5 | |
| 0.5@0.05A@0.5A | |
| 1.5 | |
| 100 | |
| 25@5mA@2V|25@500mA@2V|40@150mA@2V | |
| 1250 | |
| -55 | |
| 150 | |
| Box | |
| Mounting | Through Hole |
| Package Height | 10.85 |
| Package Width | 2.7 |
| Package Length | 7.6 |
| PCB changed | 3 |
| Tab | Tab |
| Standard Package Name | TO |
| Supplier Package | TO-225 |
| 3 | |
| Lead Shape | Through Hole |
Thanks to ON Semiconductor, your circuit can handle high levels of voltage using the NPN BD139G general purpose bipolar junction transistor. This bipolar junction transistor's maximum emitter base voltage is 5 V. Its maximum power dissipation is 1250 mW. This bipolar junction transistor has an operating temperature range of -55 °C to 150 °C. It has a maximum collector emitter voltage of 80 V and a maximum emitter base voltage of 5 V.
| EDA / CAD Models |
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