Infineon Technologies AGBCV62BE6433HTMA1GP BJT

Trans GP BJT PNP 30V 0.1A 300mW 4-Pin SOT-143 T/R Automotive AEC-Q101

Implement this PNP BCV62BE6433HTMA1 GP BJT from Infineon Technologies to add switching and amplifying capabilities to your electronic circuit design. This bipolar junction transistor's maximum emitter base voltage is 6 V. Its maximum power dissipation is 300 mW. In order to guarantee safe delivery and allow for quick mounting of this component after delivery, it will be enclosed in tape and reel packaging during shipment. It has a maximum collector emitter voltage of 30 V and a maximum emitter base voltage of 6 V. This bipolar junction transistor has an operating temperature range of -65 °C to 150 °C.

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  • Manufacturer Lead Time:
    26 weeks
    • Price: $0.1356
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