Infineon Technologies AGBCR22PNH6433XTMA1Digital BJT - Pre-Biased
Trans Digital BJT NPN/PNP 50V 0.1A 250mW 6-Pin SOT-363 T/R Automotive AEC-Q101
| Compliant | |
| EAR99 | |
| LTB | |
| COMPONENTS | |
| Automotive | Yes |
| PPAP | Unknown |
| NPN|PNP | |
| Dual | |
| 50 | |
| 0.1 | |
| 50@5mA@5V | |
| 130 | |
| 22 | |
| 1 | |
| 0.3@0.5mA@10mA | |
| 250 | |
| -65 | |
| 150 | |
| Automotive | |
| Tape and Reel | |
| Mounting | Surface Mount |
| Package Height | 0.9(Max) mm |
| Package Width | 1.25 mm |
| Package Length | 2 mm |
| PCB changed | 6 |
| Standard Package Name | SOT |
| Supplier Package | SOT-363 |
| 6 | |
| Lead Shape | Gull-wing |
Look no further than Infineon Technologies' npn and PNP BCR22PNH6433XTMA1 digital transistor's, the ideal component to use when designing a digital signal processing unit. This product's maximum continuous DC collector current is 100 mA, while its minimum DC current gain is 50@5mA@5 V. It has a maximum collector emitter saturation voltage of 0.3@0.5mA@10mA V. Its maximum power dissipation is 250 mW. It has a maximum collector emitter voltage of 50 V. This product will be shipped in tape and reel packaging so that components can be mounted effectively. It is made in a dual configuration. This transistor has a minimum operating temperature of -65 °C and a maximum of 150 °C.
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