onsemiBC858CLT1GGP BJT

Trans GP BJT PNP 30V 0.1A 300mW 3-Pin SOT-23 T/R

Design various electronic circuits with this versatile PNP BC858CLT1G GP BJT from ON Semiconductor. This bipolar junction transistor's maximum emitter base voltage is 5 V. Its maximum power dissipation is 300 mW. This product will be shipped in tape and reel packaging to allow for quick mounting and safe delivery. This bipolar junction transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. It has a maximum collector emitter voltage of 30 V and a maximum emitter base voltage of 5 V.

32,323 parts: Ships in 5 days

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      • In Stock: 32,323 parts
      • Price: $0.0453

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