Infineon Technologies AGBC848CE6327HTSA1GP BJT
Trans GP BJT NPN 30V 0.1A 330mW Automotive AEC-Q101 3-Pin SOT-23 T/R
| Compliant | |
| EAR99 | |
| LTB | |
| COMPONENTS | |
| Automotive | Yes |
| PPAP | Unknown |
| NPN | |
| Bipolar Small Signal | |
| Si | |
| Single | |
| 1 | |
| 30 | |
| 30 | |
| 6 | |
| 150 | |
| 0.7(Typ)@0.5mA@10mA|0.9(Typ)@5mA@100mA | |
| 0.25@0.5mA@10mA|0.6@5mA@100mA | |
| 0.1 | |
| 15(Typ) | |
| 420@2mA@5V | |
| 330 | |
| -65 | |
| 150 | |
| Tape and Reel | |
| Automotive | |
| Mounting | Surface Mount |
| Package Height | 1(Max) mm |
| Package Width | 1.3 mm |
| Package Length | 2.9 mm |
| PCB changed | 3 |
| Standard Package Name | SOT |
| Supplier Package | SOT-23 |
| 3 | |
| Lead Shape | Gull-wing |
The NPN BC848CE6327HTSA1 general purpose bipolar junction transistor, developed by Infineon Technologies, is the perfect solution for your high-current density needs. This bipolar junction transistor's maximum emitter base voltage is 6 V. Its maximum power dissipation is 330 mW. This product will be shipped in tape and reel packaging so that components can be mounted effectively. It has a maximum collector emitter voltage of 30 V and a maximum emitter base voltage of 6 V. This bipolar junction transistor has a minimum operating temperature of -65 °C and a maximum of 150 °C.
| EDA / CAD Models |
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