| EU RoHS | Compliant |
| Part Status | Active |
| HTS | EA |
| Product Category | Power MOSFET |
| Configuration | Single Quad Drain Triple Source |
| Channel Mode | Enhancement |
| Channel Type | N |
| Number of Elements per Chip | 1 |
| Maximum Drain-Source Voltage (V) | 100 |
| Maximum Gate-Source Voltage (V) | ±20 |
| Operating Junction Temperature (°C) | -55 to 175 |
| Maximum Continuous Drain Current (A) | 30 |
| Maximum Drain-Source Resistance (mOhm) | 3.4@10V |
| Typical Gate Charge @ Vgs (nC) | 66@10V |
| Typical Gate Charge @ 10V (nC) | 66 |
| Typical Input Capacitance @ Vds (pF) | 5300@50V |
| Maximum Power Dissipation (mW) | 7500 |
| Typical Fall Time (ns) | 13 |
| Typical Rise Time (ns) | 8 |
| Typical Turn-Off Delay Time (ns) | 46.5 |
| Typical Turn-On Delay Time (ns) | 15 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Operating Temperature (°C) | 175 |
