STMicroelectronics2STN2540GP BJT

Trans GP BJT PNP 40V 5A 1600mW 4-Pin(3+Tab) SOT-223 T/R

This specially engineered PNP 2STN2540 GP BJT from STMicroelectronics comes with a variety of characteristics including absolute maximum ratings, thermal characteristics, and DC and AC electrical characteristics. This bipolar junction transistor's maximum emitter base voltage is 6 V. Its maximum power dissipation is 1600 mW. In order to ensure safe delivery and enable quick mounting of this component after delivery, it will be encased in tape and reel packaging during shipment. It has a maximum collector emitter voltage of 40 V and a maximum emitter base voltage of 6 V. This bipolar junction transistor has an operating temperature range of -65 °C to 150 °C.

No Stock Available

Quantity Increments of 1000 Minimum 4000
  • Manufacturer Lead Time:
    14 weeks
    • Price: $0.1851
    1. 4000+$0.1851
    2. 5000+$0.1754
    3. 7000+$0.1736
    4. 10000+$0.1728
    5. 25000+$0.1690

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