onsemi2SA2222SGGP BJT
Trans GP BJT PNP 50V 10A 25000mW 3-Pin(3+Tab) TO-220F-3FS Tube
| Compliant with Exemption | |
| EAR99 | |
| Active | |
| 8541.29.00.75 | |
| SVHC | Yes |
| SVHC Exceeds Threshold | Yes |
| Automotive | No |
| PPAP | No |
| PNP | |
| Bipolar Power | |
| Si | |
| Single | |
| 1 | |
| 50 | |
| 50 | |
| 6 | |
| 150 | |
| 2 | |
| 1.2@300mA@6A | |
| 0.5@300mA@6A | |
| 10 | |
| 10000 | |
| 150@270mA@2V | |
| 25000 | |
| -55 | |
| 150 | |
| Tube | |
| Mounting | Through Hole |
| Package Height | 15.87 mm |
| Package Width | 4.7 mm |
| Package Length | 10.16 mm |
| PCB changed | 3 |
| Tab | Tab |
| Standard Package Name | TO |
| Supplier Package | TO-220F-3FS |
| 3 | |
| Lead Shape | Through Hole |
The PNP 2SA2222SG general purpose bipolar junction transistor, developed by ON Semiconductor, is the perfect solution for your high-current density needs. This bipolar junction transistor's maximum emitter base voltage is 6 V. Its maximum power dissipation is 25000 mW. This bipolar junction transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. It has a maximum collector emitter voltage of 50 V and a maximum emitter base voltage of 6 V.
| EDA / CAD Models |
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