| Compliant | |
| EAR99 | |
| Active | |
| COMPONENTS | |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Si | |
| Single | |
| Enhancement | |
| N | |
| 1 | |
| 60 | |
| ±30 | |
| 3 | |
| 0.2 | |
| 5000@10V | |
| 60(Max)@25V | |
| 25(Max) | |
| 1000 | |
| -55 | |
| 150 | |
| Bag | |
| Mounting | Through Hole |
| Package Height | 5.33(Max) |
| Package Width | 4.19(Max) |
| Package Length | 5.21(Max) |
| PCB changed | 3 |
| Standard Package Name | TO |
| Supplier Package | TO-92 |
| 3 | |
| Lead Shape | Formed |
Make an effective common source amplifier using this 2N7000-G power MOSFET from Microchip Technology. Its maximum power dissipation is 1000 mW. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C. This N channel MOSFET transistor operates in enhancement mode.
| EDA / CAD Models |
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