TT Electronics / Semelab Diodes, Transistors and Thyristors
332 TT Electronics / Semelab Diodes, Transistors and Thyristors
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| Part No. | Price | Stock | Manufacturer | Category | Type | Category | Material | Configuration | Channel Type | Channel Mode | Peak Reverse Repetitive Voltage - (V) | Maximum Collector-Emitter Voltage - (V) | Maximum Continuous Forward Current - (A) | Maximum Collector-Base Voltage - (V) | Number of Elements per Chip | Maximum Drain-Gate Voltage - (V) | Maximum Continuous DC Collector Current - (A) | Peak Non-Repetitive Forward Surge Current - (A) | Maximum Forward Voltage - (V) | Maximum Drain-Source Voltage - (V) | Maximum Base-Emitter Voltage - (V) | Maximum Base-Emitter Saturation Voltage - (V) | Peak Reverse Current - (uA) | Maximum Gate-Source Voltage - (V) | Maximum DC Collector Current - (A) | Operational Bias Conditions | Maximum Gate Threshold Voltage - (V) | Minimum DC Current Gain | Maximum Continuous Drain Current - (A) | Peak Reverse Recovery Time - (ns) | Minimum DC Current Gain Range | Typical Gate Charge @ Vgs - (nC) | Maximum Junction Ambient Thermal Resistance | Maximum Junction Case Thermal Resistance | Typical Input Capacitance - (pF) | Typical Gate Charge @ 10V - (nC) | Maximum Transition Frequency - (MHz) | Maximum Collector-Emitter Saturation Voltage - (V) | Typical Input Capacitance @ Vds - (pF) | Maximum Output Power - (W) | Typical Output Capacitance - (pF) | Maximum Power Dissipation - (mW) | Minimum Frequency - (MHz) | Maximum Frequency - (MHz) | Maximum Drain-Source Resistance - (Ohm) | Typical Power Gain - (dB) | Maximum Noise Figure - (dB) | Maximum Turn-On Time - (ns) | Process Technology | Rad Hard | Pin Count | Supplier Package | Standard Package Name | CECC Qualified | ESD Protection | ESCC Qualified | Military | AEC Qualified | Auto motive | P PAP | ECCN Code | SVHC | SVHC Exceeds Threshold |
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BUX49
Trans GP BJT NPN 90V 3.5A 10000mW 3-Pin TO-39
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TT Electronics / Semelab | GP BJT | NPN | Bipolar Power | Single | 90 | 1 | 3.5 | 20@1.7A@4V | 2 to 30 | 10000 | 3 | TO-39 | TO | No | No | No | No | EAR99 | No | No | |||||||||||||||||||||||||||||||||||||||||
BUX23
Trans GP BJT NPN 325V 30A 250000mW 3-Pin(2+Tab) TO-3
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TT Electronics / Semelab | GP BJT | NPN | Bipolar Power | Si | Single | 325 | 400 | 1 | 7 | 1.5@3.2A@16A | 30 | 12@8A@4V|8@16A@4V | 2 to 30 | 0.6 | 0.8@1.6A@8A|1@3.2A@16A | 250000 | 1300 | 3 | TO-3 | TO | No | No | No | No | No | EAR99 | No | No | |||||||||||||||||||||||||||||||||
| IRFY9140-QR-B Trans MOSFET P-CH 100V 13A 3-Pin(3+Tab) TO-257AB |
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TT Electronics / Semelab | MOSFETs | Power MOSFET | Single | P | Enhancement | 1 | 100 | ±20 | 13 | 60(Max)@10V | 1400@25V | 60000 | 240@10V | 3 | TO-257AB | No | No | No | No | No | EAR99 | No | No | ||||||||||||||||||||||||||||||||||||||
2N3209XCSM
Trans GP BJT PNP 20V 0.2A 300mW 3-Pin CLLCC-1
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TT Electronics / Semelab | GP BJT | PNP | Bipolar Small Signal | Si | Single | 20 | 20 | 1 | 4 | 0.98@1mA@10mA|1.2@3mA@30mA|1.7@10mA@100mA | 0.2 | 25@10mA@0.3V|30@30mA@0.5V|15@100mA@1V | 2 to 30|30 to 50 | 420 | 6(Max) | 0.2@1mA@10mA|0.25@3mA@30mA|0.75@10mA@100mA | 5(Max) | 300 | 60 | 3 | CLLCC-1 | LCC | No | No | No | No | EAR99 | No | No | ||||||||||||||||||||||||||||||||
| 2N6788 Trans MOSFET N-CH 100V 6A 3-Pin TO-39 |
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TT Electronics / Semelab | MOSFETs | Power MOSFET | Single | N | Enhancement | 1 | 100 | ±20 | 4 | 6 | 17(Max)@10V | 17(Max) | 350@25V | 20000 | 345@10V | 3 | TO-39 | TO | No | No | No | No | No | EAR99 | No | No | |||||||||||||||||||||||||||||||||||
| D1011UKTR Trans RF MOSFET N-CH 70V 5A 8-Pin SO |
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TT Electronics / Semelab | RF FETs | Si | Dual Quad Source | N | Enhancement | 2 | 70 | ±20 | 7 | 5 | 60(Max)@28V | 10 | 30000 | 1 | 1000 | 13(Min) | 8 | SO | SO | No | No | No | No | No | EAR99 | No | No | ||||||||||||||||||||||||||||||||||
| D5011UK Trans RF MOSFET N-CH 125V 3A 8-Pin SO |
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TT Electronics / Semelab | RF FETs | Si | Single Dual Drain Dual Gate Quad Source | N | Enhancement | 1 | 125 | ±20 | 3 | 60(Max)@50V | 30000 | 1 | 1000 | 13(Min) | 8 | SO | SO | No | No | No | No | No | EAR99 | No | No | ||||||||||||||||||||||||||||||||||||
| 2N6678M3A-JQRS NPN Silicon Transistor |
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TT Electronics / Semelab | GP BJT | No | No | No | No | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BDS16 Trans GP BJT NPN 120V 8A 43750mW 3-Pin(3+Tab) TO-257AB |
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TT Electronics / Semelab | GP BJT | NPN | Bipolar Power | Si | Single | 120 | 120 | 1 | 5 | 8 | 40@0.5A@2V|15@4A@2V | 2 to 30|30 to 50 | 0.4@0.05A@0.5A|1.5@0.4A@4A | 43750 | 500 | 3 | TO-257AB | No | No | No | No | EAR99 | No | No | |||||||||||||||||||||||||||||||||||||
| D1053UK Trans RF MOSFET N-CH 70V 5A 9-Pin Case DB |
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TT Electronics / Semelab | RF FETs | Si | Quad Common Source | N | 4 | 70 | ±20 | 5 | 60(Max)@0V | 175000 | 400 | 1000 | 7.5(Min) | 9 | Case DB | No | No | No | No | No | EAR99 | No | No | ||||||||||||||||||||||||||||||||||||||
| D1020UK.08 Trans RF MOSFET N-CH 70V 25A 5-Pin Case DR |
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TT Electronics / Semelab | RF FETs | Si | Dual Common Source | N | Enhancement | 2 | 70 | ±20 | 25 | 300(Max)@28V | 150 | 389000 | 1 | 500 | 10(Min) | 5 | Case DR | No | No | No | No | No | EAR99 | No | No | ||||||||||||||||||||||||||||||||||||
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2N2369ACSM
Trans GP BJT NPN 15V 0.2A 360mW 3-Pin CLLCC-1
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TT Electronics / Semelab | GP BJT | NPN | Bipolar Small Signal | Si | Single | 15 | 40 | 1 | 4.5 | 0.85@1mA@10mA|0.9@3mA@30mA|1.2@10mA@100mA | 0.2 | 40@10mA@0.35V|40@10mA@1V|30@30mA@0.4V|20@100mA@1V | 2 to 30|30 to 50 | 486 | 0.2@1mA@10mA|0.25@3mA@30mA|0.45@10mA@100mA | 360 | 12 | 3 | CLLCC-1 | LCC | No | Unknown | No | No | No | No | EAR99 | No | No | ||||||||||||||||||||||||||||||||
| D2012UK Trans RF MOSFET N-CH 65V 4A 3-Pin Case DP |
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TT Electronics / Semelab | RF FETs | Si | Single | N | Enhancement | 1 | 65 | ±20 | 4 | 48(Max)@0V | 10 | 42000 | 50 | 2000 | 10(Min) | 3 | Case DP | No | No | No | No | No | EAR99 | No | No | ||||||||||||||||||||||||||||||||||||
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BUY90
Trans GP BJT PNP 60V 3A 20000mW 3-Pin TO-39
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TT Electronics / Semelab | GP BJT | PNP | Bipolar Power | Single | 60 | 1 | 3 | 40@1A@5V | 30 to 50 | 20000 | 3 | TO-39 | TO | No | No | No | No | No | EAR99 | No | No | ||||||||||||||||||||||||||||||||||||||||
| D2221UK Trans RF MOSFET 40V 6A 8-Pin SO |
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TT Electronics / Semelab | RF FETs | Si | Dual Quad Source | 2 | 40 | ±20 | 6 | 36(Max)@0V | 7.5 | 17500 | 1 | 2000 | 10(Min) | 8 | SO | SO | No | Unknown | No | No | No | No | EAR99 | No | No | ||||||||||||||||||||||||||||||||||||
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2N7002CSM-JQR-B
Trans MOSFET N-CH 60V 0.115A 3-Pin LCC-1
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TT Electronics / Semelab | MOSFETs | N | Enhancement | 3 | CLLCC-1 | LCC | No | No | No | No | No | No | No | ||||||||||||||||||||||||||||||||||||||||||||||||
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BUX50-QR
Bipolar NPN Device in A Hermetically Sealed TO-39 Metal Package
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TT Electronics / Semelab | GP BJT | 3 | TO-39 | TO | No | No | No | No | No | No | |||||||||||||||||||||||||||||||||||||||||||||||||||
| D1017UK Trans RF MOSFET N-CH 70V 30A 4-Pin Case DM |
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TT Electronics / Semelab | RF FETs | Si | Single Dual Source | N | Enhancement | 1 | 70 | ±20 | 30 | 360(Max)@0V | 150 | 220000 | 1 | 175 | 16(Min) | 4 | Case DM | No | No | No | No | No | EAR99 | No | No | ||||||||||||||||||||||||||||||||||||
ZTX653/753DCSM
NPN/PNP DUAL TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE
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TT Electronics / Semelab | GP BJT | 6 | CLLCC-2 | LCC | No | No | No | No | No | No | No | ||||||||||||||||||||||||||||||||||||||||||||||||||
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2N2243A
Trans GP BJT NPN 80V 1A 800mW 3-Pin TO-39
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TT Electronics / Semelab | GP BJT | NPN | Bipolar Power | Single | 80 | 120 | 1 | 7 | 1.3@15mA@150mA | 1 | 15@0.1mA@10V|30@10mA@10V|40@150mA@10V|15@500mA@10V|30@150mA@1V | 2 to 30|30 to 50 | 0.25@15mA@150mA | 800 | 3 | TO-39 | TO | No | No | No | No | EAR99 | No | No | |||||||||||||||||||||||||||||||||||||
| D1030UK Trans RF MOSFET N-CH 70V 40A 5-Pin Case DR |
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TT Electronics / Semelab | RF FETs | Si | Dual Common Source | N | Enhancement | 2 | 70 | ±20 | 40 | 480(Max)@28V | 500000 | 1 | 200 | 13(Min) | 5 | Case DR | No | No | No | No | No | EAR99 | No | No | |||||||||||||||||||||||||||||||||||||
| D2006UK Trans RF MOSFET 65V 5-Pin Case DK |
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TT Electronics / Semelab | RF FETs | Si | Dual Common Source | 2 | 65 | ±20 | 7 | 36(Max)@0V | 70000 | 2000 | 13(Min) | 5 | Case DK | No | No | No | No | No | EAR99 | No | No | ||||||||||||||||||||||||||||||||||||||||
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BUP51
Trans GP BJT NPN 175V 80A 3-Pin(2+Tab) TO-3
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TT Electronics / Semelab | GP BJT | NPN | Bipolar Power | Si | Single | 175 | 1 | 10 | 1.1@2A@20A|1.2@4A@40A|1.5@14A@70A | 80 | 20@20A@4V|20@40A@4V|10@70A@4V | 2 to 30 | 0.5@2A@20A|0.6@4A@40A|1@14A@70A | 300000 | 3 | TO-3 | TO | No | No | No | No | No | EAR99 | No | No | ||||||||||||||||||||||||||||||||||||
| D2207UK RF MOSFET, RF VDMOS Power |
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TT Electronics / Semelab | RF FETs | No | EAR99 | No | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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2N2369ACSM-QR-EB
Trans GP BJT NPN 15V 0.2A 360mW 3-Pin CLLCC-1
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TT Electronics / Semelab | GP BJT | NPN | Bipolar Small Signal | Si | Single | 15 | 40 | 1 | 4.5 | 0.85@1mA@10mA|0.9@3mA@30mA|1.2@10mA@100mA | 0.2 | 40@10mA@0.35V|40@10mA@1V|30@30mA@0.4V|20@100mA@1V | 2 to 30|30 to 50 | 0.2@1mA@10mA|0.25@3mA@30mA|0.45@10mA@100mA | 360 | 12 | 3 | CLLCC-1 | LCC | No | Unknown | No | No | No | No | EAR99 | No | No |