Power up your design with Infineon’s OptiMOS™ 6 families

Infineon20 Aug 2024

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Infineon’s leading technology, excellent performance and improved energy efficiency - for a sustainable future!

Infineon’s OptiMOS™ technology has evolved over the years and has now reached its sixth generation with the OptiMOS™ 6 power MOSFET series. This advanced technology is resulting in significant improvements in switching and conduction losses, as well as current capabilities. These improvements lead to lower system losses, enhanced power density, improved board temperatures, and overall system reliability

As a result, OptiMOS™ 6 power MOSFETs are an ideal choice for various applications, such as telecom, solar, SMPS and renewable energy. Due to remarkable improvements in conduction resistance R_DS(on) and quality factor, they are also suitable for battery-powered applications, including power tools, low-speed vehicles, drones, robots, and battery management applications.

To meet your individual design requirements, the series offers multiple packaging options including PQFN 3.3x3.3, SuperSO8, D²PAK 3-pin, D²PAK 7-pin, TO-Leadless, sTOLL, TOLT, TOLG and TO-220.

MOSFET series	Key features	Key applications
OptiMOS™ 6 40 V	Ultra-low Q_G Low R_DS(on) Exposed pads Available in logic and normal gate drive RoHS compliant	Battery powered applications Battery powered tools Battery management Low voltage drives Power tools
OptiMOS™ 6 100 V	Compared to OptiMOS™ 5 technology: Up to ~18% lower R_DS(on) 30% improved FOM_gand up to ~43% better FOM_gd Lower and softer reverse recovery charge (Q_rr) 175°C junction temperature rating 130% improved SOA Pb-free plating and RoHS compliant	Server Telecom Solar Battery management systems
OptiMOS™ 6 120 V	Industry’s lowest R_DS(on) in 120 V Best balance between switching and conduction losses for various applications Lower R_DS(on) and FOMs where 150 V is not needed Wide package offering: SMD for FR4 and IMS PCBs, top-side cooling and THD Industrial qualification and T_{j_max}= 175°C for superior power handling and ruggedness	Power and gardening tools Adapters and fast chargers Solar Telecom Light electric vehicles
OptiMOS™ 6 135 V	Cost-efficient solution optimized for motor drives Compared to OptiMOS™ 5 technology: Improved paralleling capability through up to ~50% lower V_GS(th) spread High performance with up to ~46% lower R_DS(on) Up to ~70% lower and softer reverse recovery charge (Q_rr)	Forklift eScooter Power and gardening tool UPS
OptiMOS™ 6 200 V	Compared to the previous technology: 42% lower R_DS(on) 89% lower Q_rr(typ) More than 3 times softer diode Improved capacitance linearity Improved SOA Pb-free plating and RoHS compliant	E-Scooters Micro-EVs E-forklifts Gardening tools Servo drives Server Telecom Solar; ESS Industrial SMPS Audio

Read newest App Note: The new OptiMOS™ 6 200 V family of MOSFETs - Latest Infineon trench MOSFET technology setting the new industry standard

Infineon’s latest trench MOSFET technology, which takes advantage of a revolutionary cell design, is the brand new OptiMOS™ 6 200 V. It brings together the benefits of an exceptionally low on-state resistance R_DS(on), low diode reverse recovery and superior switching performance. These features make the OptiMOS™ 6 200 V the best fit for low-switching frequency applications such as motor drives. Firstly, the technology is briefly introduced, highlighting its technical benefits. Next, an extensive experimental evaluation compares the OptiMOS™ 6 200 V to the previous generation of OptiMOS™ 3 200 V MOSFETs.

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