Diodes IncorporatedZTX651STZ通用双极型晶体管
Trans GP BJT NPN 60V 2A 1500mW 3-Pin E-Line Ammo
| Compliant | |
| EAR99 | |
| Active | |
| 8541.10.00.80 | |
| Automotive | No |
| PPAP | No |
| NPN | |
| Bipolar Power | |
| Si | |
| Single | |
| 1 | |
| 80 | |
| 60 | |
| 7 | |
| 1.25@100mA@1A | |
| 0.3@100mA@1A|0.5@200mA@2A | |
| 2 | |
| 70@50mA@2V|100@500mA@2V|80@1A@2V|40@2A@2V | |
| 1500 | |
| -55 | |
| 200 | |
| Ammo | |
| Mounting | Through Hole |
| Package Height | 3.9 |
| Package Width | 2.28 |
| Package Length | 4.57 |
| PCB changed | 3 |
| Standard Package Name | TO |
| Supplier Package | E-Line |
| 3 | |
| Lead Shape | Through Hole |
The three terminals of this NPN ZTX651STZ GP BJT from Diodes Zetex give it the ability to be used as either an electronic switch or amplifier. This bipolar junction transistor's maximum emitter base voltage is 7 V. Its maximum power dissipation is 1500 mW. It has a maximum collector emitter voltage of 60 V and a maximum emitter base voltage of 7 V. This bipolar junction transistor has an operating temperature range of -55 °C to 200 °C.
| EDA / CAD Models |
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