| 欧盟RoHS指令 | Compliant |
| 美国出口管制分类ECCN编码 | EAR99 |
| 环保无铅 | Active |
| 美国海关商品代码 | 8541.29.00.95 |
| Automotive | No |
| PPAP | No |
| 产品类别 | Power MOSFET |
| Material | SiC |
| Configuration | Single |
| Channel Mode | Enhancement |
| Channel Type | N |
| Number of Elements per Chip | 1 |
| Maximum Drain-Source Voltage (V) | 650 |
| Maximum Gate-Source Voltage (V) | 25 |
| Maximum Continuous Drain Current (A) | 30 |
| Maximum Drain-Source Resistance (mOhm) | 113@18V |
| Typical Gate Charge @ Vgs (nC) | 28@18V |
| Typical Input Capacitance @ Vds (pF) | 873@400V |
| Maximum Power Dissipation (mW) | 111000 |
| Typical Fall Time (ns) | 28 |
| Typical Rise Time (ns) | 41 |
| Mounting | Through Hole |
| Package Height | 20.95 mm |
| Package Width | 5.02 mm |
| Package Length | 15.94 mm |
| PCB changed | 3 |
| Tab | Tab |
| Standard Package Name | TO |
| Supplier Package | TO-247 |
| Pin Count | 3 |
