Microchip TechnologyTN2435N8-GMOSFETs
Trans MOSFET N-CH Si 350V 0.365A 4-Pin(3+Tab) SOT-89 T/R
| Compliant | |
| EAR99 | |
| Active | |
| 8541.90.00.00 | |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Si | |
| Single Dual Drain | |
| Enhancement | |
| N | |
| 1 | |
| 350 | |
| ±20 | |
| 0.365 | |
| 6000@10V | |
| 125@25V | |
| 1600 | |
| 10 | |
| 10 | |
| 28 | |
| 5 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| Mounting | Surface Mount |
| Package Height | 1.6(Max) |
| Package Width | 2.6(Max) |
| Package Length | 4.6(Max) |
| PCB changed | 3 |
| Tab | Tab |
| Standard Package Name | SOT |
| Supplier Package | SOT-89 |
| 4 | |
| Lead Shape | Flat |
Do you require the advantages of traditional transistors coupled with the switching benefits of power MOSFETs? Microchip Technology's TN2435N8-G power MOSFET can provide a solution. Its maximum power dissipation is 1600 mW. This N channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C.
| EDA / CAD Models |
Smarter Drone Systems from Concept to Deployment
Download the playbook and get equipped with powerful tools and smart strategies for designing agile, efficient, modular drone systems.