| Compliant | |
| EAR99 | |
| Active | |
| 8541.29.00.95 | |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single Quad Drain Triple Source | |
| Enhancement | |
| N | |
| 1 | |
| 30 | |
| 20 | |
| 2.3 | |
| 40 | |
| 100 | |
| 1 | |
| 2.5@10V | |
| 22.5@4.5V|51@10V | |
| 51 | |
| 3595@15V | |
| 3700 | |
| 8|10 | |
| 10|17 | |
| 25|30 | |
| 12|24 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| Mounting | Surface Mount |
| Package Height | 1.07(Max) mm |
| Package Width | 3.05 mm |
| Package Length | 3.05 mm |
| PCB changed | 8 |
| Supplier Package | PowerPAK 1212 EP |
| 8 | |
| Lead Shape | No Lead |
Thanks to Vishay, both your amplification and switching needs can be taken care of with one component: the SIS476DN-T1-GE3 power MOSFET. Its maximum power dissipation is 3700 mW. This product will be shipped in tape and reel packaging to allow for quick mounting and safe delivery. This device is made with TrenchFET technology. This N channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.
| EDA / CAD Models |
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