| Compliant with Exemption | |
| EAR99 | |
| NRND | |
| 8541.29.00.95 | |
| SVHC | Yes |
| SVHC超标 | Yes |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single Quad Drain Triple Source | |
| Enhancement | |
| N | |
| 1 | |
| 30 | |
| ±20 | |
| 2.4 | |
| -55 to 150 | |
| 50 | |
| 100 | |
| 1 | |
| 2.8@10V | |
| 30.5@4.5V|63@10V | |
| 63 | |
| 9.6 | |
| 8.3 | |
| 22 | |
| 3660@15V | |
| 290@15V | |
| 1 | |
| 710 | |
| 5200 | |
| 12 | |
| 23 | |
| 36 | |
| 28 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| 2.3@10V|2.7@4.5V | |
| 5.2 | |
| 80 | |
| 65 | |
| 0.71 | |
| 2.4 | |
| 29 | |
| 1.1 | |
| 0.2 | |
| 0.9 | |
| 20 | |
| 32 | |
| Mounting | Surface Mount |
| Package Height | 1.02 |
| Package Width | 5.89 |
| Package Length | 4.9 |
| PCB changed | 8 |
| Supplier Package | PowerPAK SO EP |
| 8 | |
| Lead Shape | No Lead |
Make an effective common gate amplifier using this SIR818DP-T1-GE3 power MOSFET from Vishay. Its maximum power dissipation is 5200 mW. This product will be shipped in tape and reel packaging for quick mounting and safe delivery. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. This N channel MOSFET transistor operates in enhancement mode. This device is made with TrenchFET technology.
| EDA / CAD Models |
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