| Compliant | |
| EAR99 | |
| Obsolete | |
| 8541.10.00.80 | |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single Quad Drain Triple Source | |
| Enhancement | |
| N | |
| 1 | |
| 30 | |
| ±20 | |
| 16.5 | |
| 9@10V | |
| 23.5@10V | |
| 23.5 | |
| 1525@15V | |
| 2500 | |
| 8 | |
| 160|11 | |
| 18|22 | |
| 18|8 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| Mounting | Surface Mount |
| Package Height | 1.55(Max) |
| Package Width | 4(Max) |
| Package Length | 5(Max) |
| PCB changed | 8 |
| Standard Package Name | SO |
| Supplier Package | SOIC N |
| 8 | |
| Lead Shape | Gull-wing |
Looking for a component that can both amplify and switch between signals within your circuit? The SI4884BDY-T1-E3 power MOSFET from Vishay provides the solution. Its maximum power dissipation is 2500 mW. Tape and reel packaging will encase this product during shipment, in order to ensure safe delivery and enable quick mounting of components. This N channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C.
| EDA / CAD Models |
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