| Compliant | |
| EAR99 | |
| Active | |
| 8541.29.00.95 | |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single Quad Drain Triple Source | |
| 0.18um | |
| Enhancement | |
| P | |
| 1 | |
| 30 | |
| ±25 | |
| 3 | |
| -55 to 150 | |
| 13 | |
| 100 | |
| 1 | |
| 18@10V | |
| 22@4.5V|43@10V | |
| 43 | |
| 11 | |
| 6 | |
| 20 | |
| 1960@15V | |
| 325@15V | |
| 1 | |
| 380 | |
| 2500 | |
| 9|15 | |
| 13|100 | |
| 32|28 | |
| 11|44 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| 14@10V|24.5@4.5V | |
| 2.5 | |
| 50 | |
| 85 | |
| 0.75 | |
| 3.2 | |
| 28 | |
| 1.2 | |
| 0.3 | |
| 2.5 | |
| 25 | |
| 8.7 | |
| Mounting | Surface Mount |
| Package Height | 1.55(Max) |
| Package Width | 4(Max) |
| Package Length | 5(Max) |
| PCB changed | 8 |
| Standard Package Name | SO |
| Supplier Package | SOIC N |
| 8 | |
| Lead Shape | Gull-wing |
Thanks to Vishay, both your amplification and switching needs can be taken care of with one component: the SI4835DDY-T1-GE3 power MOSFET. Its maximum power dissipation is 2500 mW. In order to ensure safe delivery and enable quick mounting of this component after delivery, it will be encased in tape and reel packaging during shipment. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C. This device utilizes TrenchFET technology. This P channel MOSFET transistor operates in enhancement mode.
| EDA / CAD Models |
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