| Compliant | |
| EAR99 | |
| Obsolete | |
| 8541.21.00.95 | |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Dual | |
| Enhancement | |
| P|N | |
| 2 | |
| 30 | |
| ±12 | |
| 1.7@P Channel|2.5@N Channel | |
| 170@4.5V@P Channel|77@4.5V@N Channel | |
| 3.8@4.5V@P Channel|3@4.5V@N Channel | |
| 830 | |
| 20@P Channel|7@N Channel | |
| 15@P Channel|12@N Channel | |
| 20@P Channel|13@N Channel | |
| 5 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| Mounting | Surface Mount |
| Package Height | 1(Max) |
| Package Width | 1.65 |
| Package Length | 3.05 |
| PCB changed | 6 |
| Standard Package Name | SO |
| Supplier Package | TSOP |
| 6 | |
| Lead Shape | Gull-wing |
In addition to amplifying electronic signals, you'll be able to switch between various lines with the SI3590DV-T1-GE3 power MOSFET, developed by Vishay. Its maximum power dissipation is 830 mW. Tape and reel packaging will encase the product during shipment, ensuring safe delivery and enabling quick mounting of components. This N|P channel MOSFET transistor operates in enhancement mode. This device utilizes TrenchFET technology. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C.
| EDA / CAD Models |
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