| 欧盟RoHS指令 | Compliant |
| 美国出口管制分类ECCN编码 | EAR99 |
| 环保无铅 | LTB |
| 美国海关商品代码 | 8541.49.70.40 |
| Automotive | No |
| PPAP | No |
| Type | Chip |
| Phototransistor Type | Phototransistor |
| Lens Shape Type | Domed |
| Material | Silicon |
| Number of Channels per Chip | 1 |
| Polarity | NPN |
| Half Intensity Angle Degrees (°) | 24 |
| Viewing Orientation | Top View |
| Peak Wavelength (nm) | 860 |
| Maximum Rise Time (ns) | 7000/8000 |
| Maximum Fall Time (ns) | 7000/8000 |
| Maximum Light Current (uA) | 1800/2800 |
| Maximum Collector Current (mA) | 15 |
| Maximum Dark Current (nA) | 200 |
| Maximum Collector-Emitter Voltage (V) | 35 |
| Maximum Collector-Emitter Saturation Voltage (V) | 0.2 |
| Maximum Power Dissipation (mW) | 165 |
| Fabrication Technology | NPN Transistor |
| Minimum Operating Temperature (°C) | -40 |
| Maximum Operating Temperature (°C) | 100 |
| Diameter | 4(Max) |
| Mounting | Through Hole |
| Package Height | 5.2(Max) |
| PCB changed | 2 |
| Supplier Package | T-1 |
| Pin Count | 2 |
| Lead Shape | Through Hole |
