onsemiSBC847CDW1T1G通用双极型晶体管
Trans GP BJT NPN 45V 0.1A 380mW Automotive AEC-Q101 6-Pin SC-88 T/R
| Compliant | |
| EAR99 | |
| Active | |
| 8541.21.00.75 | |
| Automotive | Yes |
| PPAP | Yes |
| NPN | |
| Bipolar Small Signal | |
| Dual | |
| 2 | |
| 50 | |
| 45 | |
| 6 | |
| -55 to 150 | |
| 0.9(Typ)@5mA@100mA|0.7(Typ)@0.5mA@10mA | |
| 0.25@0.5mA@10mA|0.6@5mA@100mA | |
| 0.1 | |
| 15 | |
| 420@2mA@5V | |
| 380 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| Automotive | |
| Mounting | Surface Mount |
| Package Height | 0.9 mm |
| Package Width | 1.25 mm |
| Package Length | 2 mm |
| PCB changed | 6 |
| Standard Package Name | SOT |
| Supplier Package | SC-88 |
| 6 |
Use this versatile NPN SBC847CDW1T1G GP BJT from ON Semiconductor to design various electronic circuits. This bipolar junction transistor's maximum emitter base voltage is 6 V. Its maximum power dissipation is 380 mW. In order to guarantee safe delivery and allow for quick mounting of this component after delivery, it will be enclosed in tape and reel packaging during shipment. It has a maximum collector emitter voltage of 45 V and a maximum emitter base voltage of 6 V. This bipolar junction transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.
| EDA / CAD Models |
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