onsemiSBC807-25WT1G通用双极型晶体管
Trans GP BJT PNP 45V 0.5A 460mW 3-Pin SC-70 T/R Automotive AEC-Q101
| Compliant | |
| EAR99 | |
| Active | |
| 8541.29.00.75 | |
| Automotive | Yes |
| PPAP | Yes |
| PNP | |
| Bipolar Small Signal | |
| Si | |
| Single | |
| 1 | |
| 50 | |
| 45 | |
| 5 | |
| 0.7@50mA@500mA | |
| 0.5 | |
| 160@100mA@1V|40@500mA@1V | |
| 460 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| Mounting | Surface Mount |
| Package Height | 0.85 |
| Package Width | 1.24 |
| Package Length | 2 |
| PCB changed | 3 |
| Standard Package Name | SOT |
| Supplier Package | SC-70 |
| 3 | |
| Lead Shape | Gull-wing |
Thanks to ON Semiconductor, your circuit can handle high levels of voltage using the PNP SBC807-25WT1G general purpose bipolar junction transistor. This bipolar junction transistor's maximum emitter base voltage is 5 V. Its maximum power dissipation is 460 mW. Tape and reel packaging will encase the product during shipment, ensuring safe delivery and enabling quick mounting of components. This bipolar junction transistor has an operating temperature range of -55 °C to 150 °C. It has a maximum collector emitter voltage of 45 V and a maximum emitter base voltage of 5 V.
| EDA / CAD Models |
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