| 欧盟RoHS指令 | Compliant |
| 美国出口管制分类ECCN编码 | EAR99 |
| 环保无铅 | Active |
| Automotive | Yes |
| PPAP | Unknown |
| 产品类别 | Power MOSFET |
| Configuration | Single Quad Drain Triple Source |
| Channel Mode | Enhancement |
| Channel Type | N |
| Number of Elements per Chip | 1 |
| Maximum Drain-Source Voltage (V) | 100 |
| Maximum Gate-Source Voltage (V) | ±20 |
| Operating Junction Temperature (°C) | 150 |
| Maximum Continuous Drain Current (A) | 27 |
| Maximum Drain-Source Resistance (mOhm) | 29@10V |
| Typical Gate Charge @ Vgs (nC) | 9.3@6V|13.6@10V |
| Typical Gate Charge @ 10V (nC) | 13.6 |
| Typical Input Capacitance @ Vds (pF) | 760@50V |
| Maximum Power Dissipation (mW) | 69000 |
| Typical Fall Time (ns) | 8.8 |
| Typical Rise Time (ns) | 15 |
| Typical Turn-Off Delay Time (ns) | 36 |
| Typical Turn-On Delay Time (ns) | 12 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Operating Temperature (°C) | 150 |
| Supplier Temperature Grade | Automotive |
| Mounting | Surface Mount |
| Package Height | 0.85(Max) |
| Package Width | 4(Max) |
| Package Length | 3.3(Max) |
| PCB changed | 8 |
| Supplier Package | HSMT-AG EP |
| Pin Count | 8 |
