| 欧盟RoHS指令 | Compliant |
| 美国出口管制分类ECCN编码 | EAR99 |
| 环保无铅 | Active |
| Automotive | Yes |
| PPAP | Yes |
| 产品类别 | Power MOSFET |
| Configuration | Dual Quad Drain |
| Channel Mode | Enhancement |
| Channel Type | N |
| Number of Elements per Chip | 2 |
| Maximum Drain-Source Voltage (V) | 60 |
| Maximum Gate-Source Voltage (V) | ±20 |
| Operating Junction Temperature (°C) | -55 to 175 |
| Maximum Continuous Drain Current (A) | 20 |
| Maximum Drain-Source Resistance (mOhm) | 28@10V |
| Typical Gate Charge @ Vgs (nC) | 2@4.5V|5@10V |
| Typical Gate Charge @ 10V (nC) | 5 |
| Typical Input Capacitance @ Vds (pF) | 350@25V |
| Maximum Power Dissipation (mW) | 3200 |
| Typical Fall Time (ns) | 23 |
| Typical Rise Time (ns) | 25 |
| Typical Turn-Off Delay Time (ns) | 13 |
| Typical Turn-On Delay Time (ns) | 6.4 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Operating Temperature (°C) | 175 |
| Supplier Temperature Grade | Automotive |
