onsemiNTR4501NT1GMOSFETs

The ON Semiconductor MOSFETs are able to quickly switch between data lines as well as amplify the signals themselves. It has 1 number of elements per chip. The maximum Drain Source Voltage of the product is 60 V and Gate Source Voltage is ±20 V. Its maximum power dissipation is 1250 mW. This MOSFET has an operating temperature range of -55°C to 150°C.

Features and Benefits:
• Leading Planar Technology for Low Gate Charge / Fast Switching
• 2.5 V Rated for Low Voltage Gate Drive
• SOT-23 Surface Mount for Small Footprint
• NVR Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable
• These Devices are Pb-Free and are RoHS Compliant

Application:
• Load/Power Switch for Portables
• Load/Power Switch for Computing
• DC-DC Conversion

Compared to traditional transistors, NTR4501NT1G power MOSFETs, developed by ON Semiconductor, are able to both quickly switch between data lines as well as amplify the signals themselves. Its maximum power dissipation is 1250 mW. In order to ensure safe delivery and enable quick mounting of this component after delivery, it will be encased in tape and reel packaging during shipment. This N channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C.